• DocumentCode
    1959285
  • Title

    High performance In2O3 nanowire transistors using organic gate nanodielectrics

  • Author

    Ju, Sanghyun ; Lu, Gang ; Chen, Po-Chiang ; Facchetti, Antonio ; Zhou, Chongwu ; Marks, Tobin J. ; Janes, David B.

  • Author_Institution
    Purdue Univ., West Lafayette
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    169
  • Lastpage
    170
  • Abstract
    In this study, we report high performance nanowire transistors using individual in 203 nanowires as channels, a multilayer self-assembled organic nano-dielectric (SAND) as the gate insulator (thickness -15 nm, capacitance -180 nF/cm2, and leakage current density ~1x10-6 A/cm2 up to 2 V). The NWTs use an individually addressable indium zinc oxide (IZO) bottom-gate and Al source/drain electrodes.
  • Keywords
    indium compounds; insulated gate field effect transistors; leakage currents; nanowires; semiconductor quantum wires; zinc compounds; In2O3; In2Zn2O5; gate insulator; indium zinc oxide; leakage current density; nanowire transistors; organic gate nanodielectrics; self-assembled organic nanodielectric; Capacitance; Chemistry; High performance computing; Nanoscale devices; Nanotechnology; Optical computing; Organic materials; Reliability engineering; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373702
  • Filename
    4373702
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1959285