THz probe for nanowire FETs: simulation of few-electron fingerprints

Nanowire-based field effect transistors (FET) represent prototypes for the study of technological as well as physical challenges in future transistor designs. In contrast to conventional devices, future FETs will be strongly influenced by two non-classical effects: quantization of electronic states due to confinement and few-electron Coulomb interaction effects. On the other hand, these effects can be used to obtain valuable information about application-relevant system parameters such as capacitances.