• DocumentCode
    1959469
  • Title

    Microfluidic mixing with electrokinetic instability in a double T-shaped microchannel

  • Author

    Shou-Ping Hsu ; Kao-Feng Yarn ; Win-Jet Luo ; Hsieh, I-Ting ; Hong-Jun Ye ; Meng-Hua Chung

  • Author_Institution
    Dept. of Refrigeration, Nat. Chin-Yi Univ. of Technol., Taiping
  • fYear
    2009
  • fDate
    5-8 Jan. 2009
  • Firstpage
    787
  • Lastpage
    792
  • Abstract
    This paper investigates the EKI phenomenon in a double T-shaped microchannel, in which two aqueous electrolyte solutions with a 3.5:1 conductivity ratio are driven electrokinetically into the mixing channel via the application of a DC electrical field. A stratified flow condition is formed when the intensity of the applied DC electrical field is below a certain threshold value. However, as the intensity is increased the lower high-conductivity stream in the entrance region of the main mixing channel fluctuates alternately in the upward and downward direction resulting in a series of flow circulations forms at the interfaces of neighboring solutions flows, and then propagate in the downstream direction. It is found that the electric perturbations added at upper inlet of the microchannel near the main mixing channel can stir the microfluidic instability and the induced flow instability conditions can enhance the mixing efficiency.
  • Keywords
    electrokinetic effects; electrolytes; flow instability; fluctuations; microchannel flow; stratified flow; DC electrical field; double T-shaped microchannel; electrokinetic instability; electrolyte solutions; microfluidic mixing; stratified flow; Analytical models; Atomic layer deposition; Carbon nanotubes; Damping; Electrokinetics; Mechanical engineering; Mechanical factors; Microchannel; Microfluidics; Solid modeling; Electrical conductivity; Electrical field perturbation; Electrokinetic instability (EKI); Mixing efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-4629-2
  • Electronic_ISBN
    978-1-4244-4630-8
  • Type

    conf

  • DOI
    10.1109/NEMS.2009.5068696
  • Filename
    5068696