DocumentCode
1959470
Title
Single Ultra Violet Photon Detection with 4H-SiC Avalanche Photodiodes
Author
Bai, Xiaogang ; Mcintosh, Dion ; Liu, Handin ; Campbell, Joe
Author_Institution
Univ. of Virginia, Charlottesville
fYear
2007
fDate
18-20 June 2007
Firstpage
189
Lastpage
190
Abstract
In this paper we report SiC APDs that achieve gain comparable to PMTs while exhibiting higher quantum efficiency and lower dark current. In addition, we report single photon detection at 265 nm.
Keywords
avalanche photodiodes; photomultipliers; silicon compounds; wide band gap semiconductors; SiC; avalanche photodiodes; photomultiplier tubes; quantum efficiency; single ultra violet photon detection; size 265 nm; Avalanche photodiodes; Circuits; Dark current; Electric breakdown; Fiber lasers; Laser mode locking; Laser noise; Optical pulses; Power lasers; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373712
Filename
4373712
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