DocumentCode :
1959548
Title :
High temperature CW operation of interband cascade lasers at λ˜4.0 μm
Author :
Kim, Chul Soo ; Kim, Mijin ; Bewley, William W. ; Canedy, Chadwick L. ; Larrabee, Diane C. ; Nolde, Jill A. ; Lindle, J. Ryan ; Vurgaftman, Igor ; Meyer, Jerry R.
Author_Institution :
Naval Res. Lab., Washington
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
195
Lastpage :
196
Abstract :
The mid-infrared spectral band encompasses a variety of important applications, including chemical sensing, free-space optical communication, and IR countermeasures. Currently, however, most of the wavelength range between 3 and 4 μm is not accessible with semiconductor sources operating in continuous mode at room temperature. We believe that the most promising structure for bridging this gap is the interband cascade laser (ICL).
Keywords :
current density; gallium compounds; molecular beam epitaxial growth; semiconductor lasers; GaSb; IR countermeasures; chemical sensing; free-space optical communication; high temperature CW operation; interband cascade lasers; interband diodes; mid-infrared spectral band; molecular beam epitaxy; n-GaSb substrates; semiconductor sources; threshold current densities; wallplug efficiencies; wavelength 3.6 mum to 4.1 mum; Chemical lasers; Coatings; Gold; Laboratories; Lithography; Optical fiber communication; Quantum cascade lasers; Superlattices; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373715
Filename :
4373715
Link To Document :
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