Hybrid ALD-SiN/Si-nanocrystals/ALD-SiN FinFET device with large P/E window for MLC NAND Flash memory application

Author

Choe, Jeong-Dong ; Lee, Se-Hoon ; Ahn, Young Joon ; Jang, Donghoon ; Yoon, Young-Bae ; Lee, Jong Jin ; Chung, Ilsub ; Par, Kyucharn ; Park, Donggun

Author_Institution

Sungkyunkwan Univ., Seoul

fYear

2007

fDate

18-20 June 2007

Firstpage

215

Lastpage

216

Abstract

To improve P/E window of real NVM device, we have fabricated hybrid nanocrystal FinFET structures using state-of-the-art technologies such as TaN metal gate, atomic layer deposition (ALD) method, Al₂O₃ blocking dielectrics, post-deposition anneal (PDA) and plasma doping (PLAD) in order to provide the product-wise solutions for the next generation NAND Flash memory. We present results of P/E characteristics of our device with above-mentioned technology and propose the process integration.

Keywords

MOSFET; aluminium compounds; atomic layer deposition; flash memories; logic gates; random-access storage; silicon compounds; tantalum compounds; FinFET device; MLC NAND flash memory; NVM device; atomic layer deposition; blocking dielectrics; hybrid ALD; large P/E window; nanocrystals; plasma doping; post-deposition anneal; Annealing; Atomic layer deposition; Dielectric devices; Doping; FinFETs; Nanocrystals; Nonvolatile memory; Plasma applications; Plasma devices; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373724

Filename

4373724