DocumentCode
1959738
Title
Ge/Si hetero-nanocrystal nonvolatile floating gate memory
Author
Li, Bei ; Zhu, Yan ; Liu, Jianlin
Author_Institution
Univ. of CA, Riverside
fYear
2007
fDate
18-20 June 2007
Firstpage
217
Lastpage
218
Abstract
Silicon nanocrystal (NC) has been used as the charge storage in nonvolatile memory devices owing to their advantages of low operation voltage, small size and compatibility to the logic circuit. In order to improve the retention characteristics and the programming speed simultaneously, Ge/Si hetero-nanocrystal (HNC) was proposed to be used as the floating gate. In this presentation, we report the fabrication and characterization of Ge/Si HNC MOS memories.
Keywords
Ge-Si alloys; MOS memory circuits; X-ray photoelectron spectra; atomic force microscopy; chemical vapour deposition; nanoelectronics; random-access storage; semiconductor storage; Ge-Si; LPCVD; MOS memories characterization; MOS memories fabrication; atomic force microscopy; hetero-nanocrystal nonvolatile floating gate memory; programming speed; retention characteristics; x-ray photoemission spectroscopy; Atomic force microscopy; Fabrication; Germanium; Hetero-nanocrystal memory; Laboratories; Logic circuits; Low voltage; Nanocrystals; Nonvolatile memory; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373725
Filename
4373725
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