Coherent optical excitation of single excitons in quantum dots

Author

Bonadeo, N.H. ; Erland, J. ; Gang Chen ; Steel, D.G. ; Gammon, D.

Author_Institution

Randall Lab. of Phys., Michigan Univ., Ann Arbor, MI, USA

fYear

1998

fDate

8-8 May 1998

Firstpage

161

Lastpage

162

Abstract

Summary form only given.We present data that combine the elegance and power of frequency and time-domain coherent spectroscopy with recent advances in QD probing that opens up a new direction of research for direct measurements of QD dynamics, coherent transients, and optical nonlinearities in these new nanostructures. The measurements are performed at T=6 K in a narrow 42-A single molecular beam epitaxy (MBE)-grown GaAs quantum well with 250 AlGaAs barriers.

Keywords

III-V semiconductors; excitons; gallium arsenide; molecular beam epitaxial growth; optical coherent transients; semiconductor quantum dots; semiconductor quantum wells; 6 K; AlGaAs; GaAs; MBE; QD dynamics; QD probing; coherent optical excitation; coherent transients; nanostructures; optical nonlinearities; quantum dots; single excitons; single molecular beam epitaxy grown GaAs quantum well; time-domain coherent spectroscopy; Excitons; Frequency measurement; Gallium arsenide; Molecular beam epitaxial growth; Nanostructures; Performance evaluation; Power measurement; Quantum dots; Spectroscopy; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680334

Filename

680334