Title :
An improved method to remove anti-footing Al layer after DRIE
Author :
Li, Yuan ; Yang, Zhenchuan ; Yan, Guizhen
Author_Institution :
Nat. Key Lab. of Micro/Nano Fabrication Technol., Peking Univ., Beijing
Abstract :
The SGADER (Silicon Glass Anodic-bonding and Deep Etching Release) technology is a well-developed platform for many MEMS devices. An anti-footing aluminum film is a low cost but effective approach to minimize the footing effect in SGADER process, but such Al film cannot be removed completely with normal Al wet etchant after DRIE. In this paper, an optimized etching process for cleaning the anti-footing Al was developed and tested. The experimental results show that the newly developed etching process can improve the efficiency of the Al removing process.
Keywords :
aluminium; micromechanical devices; optimisation; sputter etching; Al; DRIE; MEMS device; SGADER technology; antifooting aluminum film layer removing process; normal aluminium wet etchant; optimized etching process; silicon glass anodic-bonding and deep etching release technology; Electrodes; Glass; Microelectromechanical devices; Microelectronics; Plasma density; Semiconductor films; Silicon; Sputter etching; Substrates; Wet etching; DRIE; SGADER; anti-footing; footing effect;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068712
