DocumentCode :
1959966
Title :
Radiation Damage Testing Of Transistors For SSC Front-end Electronics
Author :
Dawson, J. ; Ekenberg, T. ; Stevens, A. ; Kraner, H. ; Radeka, V. ; Rescia, S. ; Kerns, S.
Author_Institution :
Argonne National Laboratory
fYear :
1990
fDate :
22-27 Oct 1990
Firstpage :
843
Lastpage :
845
Keywords :
Bipolar transistors; Electronic equipment testing; Ionizing radiation; JFETs; Laboratories; MOSFETs; Manufacturing; Neutrons; Noise measurement; Radiation detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium, 1990. Conference record : Including Sessions on Nuclear Power Systems and Medical Imaging Conference, 1990 IEEE
Print_ISBN :
0-87942-683-7
Type :
conf
DOI :
10.1109/NSSMIC.1990.693471
Filename :
693471
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1959966
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