Title :
Recent Advances in MRAM Technology
Author :
Slaughter, Jon M.
Author_Institution :
Freescale Semicond., Inc., Chandler
Abstract :
In this paper we review recent progress, present specifics of Freescale´s commercial MRAM device, and discuss the future outlook for MRAM technology, including the extension of Toggle MRAM to meet industrial/automotive requirements, and scaling behavior to the reduced dimensions of advanced technology nodes. We have performed extensive operational characterization and accelerated stress testing of our extended-range MRAM technology and validated its full functionality and high reliability in these extreme environments. In conclusion, recent progress demonstrates the ability of Toggle MRAM to meet industrial and automotive requirements. New research results on higher-performance materials and devices show the potential for advanced scaling and further performance improvements in both read and write properties.
Keywords :
automotive electronics; magnetic storage; magnetoresistance; random-access storage; Freescale; Toggle MRAM; accelerated stress testing; automotive requirements; extensive operational characterization; industrial requirements; magnetoresistive random access memory technology; scaling behavior; Antiferromagnetic materials; Automotive engineering; CMOS technology; Magnetic field measurement; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetic switching; Magnetic tunneling; Magnetoresistance;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373737
