Recent Advances in MRAM Technology

Author

Slaughter, Jon M.

Author_Institution

Freescale Semicond., Inc., Chandler

fYear

2007

fDate

18-20 June 2007

Firstpage

245

Lastpage

246

Abstract

In this paper we review recent progress, present specifics of Freescale´s commercial MRAM device, and discuss the future outlook for MRAM technology, including the extension of Toggle MRAM to meet industrial/automotive requirements, and scaling behavior to the reduced dimensions of advanced technology nodes. We have performed extensive operational characterization and accelerated stress testing of our extended-range MRAM technology and validated its full functionality and high reliability in these extreme environments. In conclusion, recent progress demonstrates the ability of Toggle MRAM to meet industrial and automotive requirements. New research results on higher-performance materials and devices show the potential for advanced scaling and further performance improvements in both read and write properties.

Keywords

automotive electronics; magnetic storage; magnetoresistance; random-access storage; Freescale; Toggle MRAM; accelerated stress testing; automotive requirements; extensive operational characterization; industrial requirements; magnetoresistive random access memory technology; scaling behavior; Antiferromagnetic materials; Automotive engineering; CMOS technology; Magnetic field measurement; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetic switching; Magnetic tunneling; Magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373737

Filename

4373737