DocumentCode :
1960128
Title :
High Performance Polycrystalline Diamond Micro Resonators
Author :
Sepulveda, Nelson ; Lu, Jing ; Aslam, Dean M. ; Sullivan, J.P.
Author_Institution :
Michigan State Univ., Lansing
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
255
Lastpage :
256
Abstract :
The highest Q factors for polycrystalline diamond resonators (also the highest Q factors for a cantilever beam made of any polycrystalline material) have been measured, whose undoped poly-C films grown at 780 degC. For boron doped poly-C films or poly-C films grown at a growth temperature of 600 degC, significantly lower Qs were observed. The doped poly-C film exhibited a peak in dissipation at 673 K, suggesting the existence of a dominant defect in these films that maybe related to boron doping. In addition, the temperature dependence of the poly-C resonators was examined, and a temperature coefficient of resonance frequency in the range of -1.59 x 10-5 degC-1 to -2.56 x 10-5 degC-1 was observed.
Keywords :
diamond; micromechanical resonators; semiconductor doping; C:B; Q factors; boron doping; cantilever beam; dominant defect; poly-C resonators; polycrystalline diamond microresonators; polycrystalline material; temperature 600 C; temperature 673 K; temperature 780 C; Boron; Frequency measurement; Microcavities; Q factor; Q measurement; Resonance; Resonant frequency; Temperature dependence; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373742
Filename :
4373742
Link To Document :
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