Title :
Growth and characterization of PZT thin films with A Pt/Ti layer on silicon substrate
Author :
Zhang, Yi ; Bao, Daqun ; Guo, Hang
Author_Institution :
Pen-Tung Sah MEMS Res. Center, Xiamen Univ., Xiamen
Abstract :
In this paper, we study the growth and characterization of PZT thin films with a Pt/Ti layer on silicon substrate. The PZT thin films are prepared by the sol-gel method, and X-ray diffractometer (XRD) is used to test their orientation and crystalline quality. A stress-strain formula is derived and used for analyzing the residual stresses of the films. Moreover, surface morphology and microstructure of the films are investigated by using AFM, and the polarization hysteresis of the films is measured by using a Sawyer Tower circuit. The results show that the PZT thin films prepared by using the sol-gel method have good properties and can be used for developing the PZT-based micro and nano devices.
Keywords :
X-ray diffraction; atomic force microscopy; dielectric hysteresis; dielectric polarisation; lead compounds; piezoelectric thin films; sol-gel processing; stress-strain relations; surface morphology; PZT; Sawyer Tower circuit; X-ray diffractometer; polarization hysteresis; residual stresses; sol-gel method; stress-strain formula; surface morphology; Circuit testing; Crystal microstructure; Crystallization; Residual stresses; Semiconductor thin films; Silicon; Surface morphology; Transistors; X-ray diffraction; X-ray scattering; lead zirconate titanate (PZT); polarization hysteresis; sol-gel method; surface morphology;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068723
