DocumentCode
1960252
Title
Scaling Behaviors of Graphene Nanoribbon FETs
Author
Yoon, Youngki ; Ouyang, Yijian ; Guo, Jing
Author_Institution
Univ. of Florida, Gainesville
fYear
2007
fDate
18-20 June 2007
Firstpage
271
Lastpage
272
Abstract
In this study, we report the comprehensive 3-D quantum simulation of GNRFETs to explore scaling behaviors and ultimate scaling limits of GNRFETs. The dependence of the I-V characteristics, transconductance, subthreshold swing, and DIBL on the channel length is studied and compared for single gate, double gate, and wrapped around gate geometries, and the roles of gate insulator and contact size are examined.
Keywords
ballistic transport; field effect transistors; leakage currents; nanoelectronics; nanowires; semiconductor device models; tunnelling; 3-D quantum simulation; DIBL; GNR width; GNRFET; I-V characteristics; ballistic characteristics; contact size; direct source-drain tunneling; electrostatic short channel effects; gate geometries; graphene nanoribbon FET; leakage current; scaling behaviors; subthreshold swing; transconductance; transistor characteristics; ultimate scaling limitation; Contacts; FETs; Geometry; Leakage current; Photonic band gap; Poisson equations; Schottky barriers; Transconductance; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373750
Filename
4373750
Link To Document