Title :
Scaling Behaviors of Graphene Nanoribbon FETs
Author :
Yoon, Youngki ; Ouyang, Yijian ; Guo, Jing
Author_Institution :
Univ. of Florida, Gainesville
Abstract :
In this study, we report the comprehensive 3-D quantum simulation of GNRFETs to explore scaling behaviors and ultimate scaling limits of GNRFETs. The dependence of the I-V characteristics, transconductance, subthreshold swing, and DIBL on the channel length is studied and compared for single gate, double gate, and wrapped around gate geometries, and the roles of gate insulator and contact size are examined.
Keywords :
ballistic transport; field effect transistors; leakage currents; nanoelectronics; nanowires; semiconductor device models; tunnelling; 3-D quantum simulation; DIBL; GNR width; GNRFET; I-V characteristics; ballistic characteristics; contact size; direct source-drain tunneling; electrostatic short channel effects; gate geometries; graphene nanoribbon FET; leakage current; scaling behaviors; subthreshold swing; transconductance; transistor characteristics; ultimate scaling limitation; Contacts; FETs; Geometry; Leakage current; Photonic band gap; Poisson equations; Schottky barriers; Transconductance; Tunneling; Voltage;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373750
