DocumentCode
1960295
Title
Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots
Author
Hailin Wang ; Xudong Fan ; Takagahara, T. ; Cunningham, J.E.
Author_Institution
Dept. of Phys., Oregon Univ., Eugene, OR, USA
fYear
1998
fDate
8-8 May 1998
Firstpage
162
Lastpage
163
Abstract
Summary form only given.We report studies of exciton dephasing in quantum dot (QD)-like islands in narrow GaAs quantum wells (QWs). Using three pulse transient four-wave mixing (FWM), we compare dephasing rates directly with population decay rates. This comparison reveals a pure dephasing process that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation.
Keywords
III-V semiconductors; excitons; gallium arsenide; multiwave mixing; semiconductor quantum dots; GaAs; GaAs quantum dots; dephasing rates; elevated temperatures; exciton dephasing; exciton-phonon interactions; excitonic dephasing; narrow GaAs quantum wells; population decay rates; pure dephasing; three pulse transient four-wave mixing; Autocorrelation; Delay effects; Excitons; Gallium arsenide; Interference; Optical pulses; Polarization; Quantum dots; US Department of Transportation; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-541-2
Type
conf
DOI
10.1109/IQEC.1998.680336
Filename
680336
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