• DocumentCode
    1960401
  • Title

    The improvement of electrochemical etching process for silicon microchannel plates

  • Author

    Yuan, Ding ; Ci, Pengliang ; Tian, Fei ; Shi, Jing ; Xu, Shaohui ; Xin, Peisheng ; Wang, Lianwei

  • Author_Institution
    Dept. of Electron. Eng., East China Normal Univ., Shanghai
  • fYear
    2009
  • fDate
    5-8 Jan. 2009
  • Firstpage
    964
  • Lastpage
    969
  • Abstract
    Silicon microchannel plates have been explored intensively for numerous applications especially for ultraviolet image detection. The electrochemical etching in hydrofluoric acid-based solutions is known as a technique for porous silicon formation. The function of backside illumination and temperature in the electrochemical etching of large-size and high aspect ratio silicon microchannels plates has been reported in this paper. The backside illumination was provided by a set of triple 150 W tungsten-halogen lamps with a feedback-loop which keeps the constant current density. And a circulation system was set up to maintain the etching temperature. It was found that proper backside illumination and lower temperature can form an improved etching condition in which etching may result in smoother undercut and better surface topography for large-size silicon microchannel plates.
  • Keywords
    etching; image sensors; lighting; microchannel plates; photoelectrochemistry; silicon; surface topography; Si; backside illumination; circulation system; current density; electrochemical etching; feedback-loop; hydrofluoric acid-based solutions; power 150 W; silicon microchannel plates; surface topography; tungsten-halogen lamps; ultraviolet image detection; Contracts; Costs; Current density; Etching; Fabrication; Lamps; Lighting; Microchannel; Silicon; Temperature; Backside Illumination; Photon-Electrochemical Etching; Silicon Microchannel Plates; Temperature; Undercut;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-4629-2
  • Electronic_ISBN
    978-1-4244-4630-8
  • Type

    conf

  • DOI
    10.1109/NEMS.2009.5068734
  • Filename
    5068734