Title :
Transferred electron devices
Author :
Vlaardingerbroek, M.T.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Abstract :
These devices are based on the bulk negative differential conductivity, occurring in certain two-valley semiconductors at high bias fields as a result of the inter valley scattering of hot electrons. The study of this inter valley scattering mechanism in GaAs and the resulting velocity field-strength characteristic will be very briefly reviewed.
Keywords :
Conducting materials; Conductivity; Dielectric materials; Doping; Electrons; Gallium arsenide; Gunn devices; Scattering; Semiconductor materials;
Conference_Titel :
Microwave Conference, 1969. 1st European
Conference_Location :
London, UK
DOI :
10.1109/EUMA.1969.331835
