DocumentCode
1960688
Title
Transferred electron devices
Author
Vlaardingerbroek, M.T.
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
fYear
1969
fDate
8-12 Sept. 1969
Firstpage
206
Lastpage
206
Abstract
These devices are based on the bulk negative differential conductivity, occurring in certain two-valley semiconductors at high bias fields as a result of the inter valley scattering of hot electrons. The study of this inter valley scattering mechanism in GaAs and the resulting velocity field-strength characteristic will be very briefly reviewed.
Keywords
Conducting materials; Conductivity; Dielectric materials; Doping; Electrons; Gallium arsenide; Gunn devices; Scattering; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1969. 1st European
Conference_Location
London, UK
Type
conf
DOI
10.1109/EUMA.1969.331835
Filename
4130534
Link To Document