DocumentCode :
1961053
Title :
A novel micro-electrostatic field sensor based on parallel-plate resonator
Author :
Peng, Chunrong ; Xia, Shanhong
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Beijing
fYear :
2009
fDate :
5-8 Jan. 2009
Firstpage :
1092
Lastpage :
1095
Abstract :
A vertical-driven resonant micromechanical electrostatic field sensor (EFS) has been firstly developed in this paper. The sensor architecture has three major blocks: a parallel-plate driving electrode, a shielding electrode and a sensing electrode. Unlike other devices, there are many holes in the shielding electrode for modulating the electric field. For improving the signal-to-noise ratio (SNR), a differential driving structure is used in the sensor design, and detecting this second-harmonic sensing signal allows the feedthrough signal at the drive frequency to be largely rejected. Based on a digital lock-in amplifier system, we achieve a nonlinearity of 2.8% (end-point-straight-line) at resonant frequency (11.8 kHz) in measurement the range of 0~33kV/m with a driving voltage of 2Vp-p for our prototype device. The device demonstrates lower driving voltage and lower power dissipation than previously MEMS-based EFS. For further improving the performance of the sensor, a closed-loop feedback driving resonant EFS is presented.
Keywords :
electrostatic devices; microsensors; resonators; differential driving structure; digital lock-in amplifier system; frequency 11.8 kHz; microelectrostatic field sensor; parallel-plate resonator; second-harmonic sensing signal; signal-to-noise ratio; Amplifiers; Electrodes; Electrostatics; Frequency measurement; Micromechanical devices; Resonance; Resonant frequency; Signal design; Signal to noise ratio; Voltage; Electrostatic driving; Electrostatic field sensor; Fieldmeter; Resonant sensor; Surface micromachining process;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
Type :
conf
DOI :
10.1109/NEMS.2009.5068763
Filename :
5068763
Link To Document :
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