DocumentCode :
1961063
Title :
Investigation of electrostatic bonding time model with point cathode
Author :
Tang, Jialu ; Liu, Xiaowei ; Zhang, Haifeng ; Wang, Xilian
Author_Institution :
MEMS Center, Harbin Instituted of Technol., Harbin
fYear :
2009
fDate :
5-8 Jan. 2009
Firstpage :
1096
Lastpage :
1098
Abstract :
This paper discusses a novel method of modeling and simulation of anodic bonding technique, which is widely used in fabrication of MEMS device and micro system. The emphasis are the bond expansion model and extended time formula of silicon-glass anodic bonding, and based on which, visual simulation of the process is achieved. In practical experiments, by utilizing the math model, simulation result matches well with the real process, perfectly displaying the electricity characteristics. This novel approach of simulation possesses high practicality, and additionally, will be important and valuable in the development of MEMS technology and microelectronics.
Keywords :
bonding processes; cathodes; elemental semiconductors; microfabrication; micromechanical devices; semiconductor process modelling; silicon; MEMS device; Si; anodic bonding technique; bond expansion model; electrostatic bonding time model; microsystem fabrication; point cathode; silicon-glass anodic bonding; visual process simulation; Bonding forces; Bonding processes; Capacitance; Cathodes; Electrodes; Electrostatics; Glass; Microelectronics; Micromechanical devices; Silicon; MEMS; anodic bonding; process simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
Type :
conf
DOI :
10.1109/NEMS.2009.5068764
Filename :
5068764
Link To Document :
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