Design of a novel sensor based on piezo-resistive effect of GaAs/AlGaAs/InGaAs PHEMT

Author

Cui, Jing ; Zhang, Bingzhen ; Liu, Jun ; Xue, Chengyang ; Liu, Guowen ; Jia, Xiaojuan

Author_Institution

Key Lab. of Instrum. Sci. & Dynamic Meas., North Univ. Of China, Taiyuan

fYear

2009

fDate

5-8 Jan. 2009

Firstpage

1103

Lastpage

1106

Abstract

A novel nano electro mechanical system (NEMS) accelerated sensor was presented in this paper. The accelerated sensor is based on piezo-resistive effect of GaAs/AlAs/InGaAs pseudomorph-high electron mobility transistor (PHEMT). Piezo-resistive effect of field effect transistor (FET) is analyzed, the structure of the sensor and its sensitive element are designed, and process is introduced. Abecedarian test is performed, and the test result shows that this NEMS accelerated sensor could sense exterior stress well.

Keywords

accelerometers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; nanosensors; piezoresistive devices; semiconductor device testing; Abecedarian test; GaAs-AlGaAs-InGaAs; GaAs/AlGaAs/InGaAs PHEMT; accelerated sensor; field effect transistor; nanoelectro mechanical system; piezoresistive effect; pseudomorph-high electron mobility transistor; Acceleration; FETs; Gallium arsenide; Indium gallium arsenide; Mechanical sensors; Mechanical systems; Nanoelectromechanical systems; PHEMTs; Sensor systems; Testing; GaAs; NEMS; PHEMT; accelerometer; piezo-resistive;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4244-4629-2

Electronic_ISBN

978-1-4244-4630-8

Type

conf

DOI

10.1109/NEMS.2009.5068766

Filename

5068766