Title :
Design of a novel sensor based on piezo-resistive effect of GaAs/AlGaAs/InGaAs PHEMT
Author :
Cui, Jing ; Zhang, Bingzhen ; Liu, Jun ; Xue, Chengyang ; Liu, Guowen ; Jia, Xiaojuan
Author_Institution :
Key Lab. of Instrum. Sci. & Dynamic Meas., North Univ. Of China, Taiyuan
Abstract :
A novel nano electro mechanical system (NEMS) accelerated sensor was presented in this paper. The accelerated sensor is based on piezo-resistive effect of GaAs/AlAs/InGaAs pseudomorph-high electron mobility transistor (PHEMT). Piezo-resistive effect of field effect transistor (FET) is analyzed, the structure of the sensor and its sensitive element are designed, and process is introduced. Abecedarian test is performed, and the test result shows that this NEMS accelerated sensor could sense exterior stress well.
Keywords :
accelerometers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; nanosensors; piezoresistive devices; semiconductor device testing; Abecedarian test; GaAs-AlGaAs-InGaAs; GaAs/AlGaAs/InGaAs PHEMT; accelerated sensor; field effect transistor; nanoelectro mechanical system; piezoresistive effect; pseudomorph-high electron mobility transistor; Acceleration; FETs; Gallium arsenide; Indium gallium arsenide; Mechanical sensors; Mechanical systems; Nanoelectromechanical systems; PHEMTs; Sensor systems; Testing; GaAs; NEMS; PHEMT; accelerometer; piezo-resistive;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068766
