Electron mobility in enhanced N-type silicon nanowire MOSFET

In this paper, a 2D Monte Carlo method is developed to investigate electron transport in enhanced N-type silicon nanowire MOSFET. Approximate wave functions approach is chosen to solve quantum transport and determine electronic states in the silicon nanowire MOSFET. The electron mobility in nanowire MOSFET is ranging from 100 cm²V^-1s^-1 to 1100 cm²V^-1s^-1 under different transverse and perpendicular fields. The effect on electron mobility of each scattering mechanic is studied. It is observed that 3g and 3f intervalley scattering plays the most important role on electron mobility at low effective field and surface roughness scattering contributes dominant effect (about 70%) on the mobility at high effective field. Especially we find out that when surface roughness scattering is taken into consideration electron mobility will decrease by 20%~60%. Furthermore, the effect on different oxide materials on nanowire electron mobility shows that electron mobility will increase dramatically with high dielectric constant material as the oxide layer in silicon nanowire MOSFET.