A new SOI structure for mixed mode ICs and its body-related characteristics

Author

Lee, H. ; Lee, Joun-Ho ; Park, Y.-J. ; Min, H.S.

Author_Institution

ISRC & Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1998

fDate

5-8 Oct. 1998

Firstpage

63

Lastpage

64

Abstract

A new SOI structure is proposed in order to suppress both the floating body effect in thick SOI films for the analog circuit region and degradation in the source/drain resistance in thin SOI films for the digital circuit region. We report experimental results showing the dependence of the kink effect and the operational current on the body resistance, and thereby the body contact design rule can be found.

Keywords

electric resistance; integrated circuit design; integrated circuit reliability; integrated circuit testing; mixed analogue-digital integrated circuits; silicon-on-insulator; SOI structure; Si-SiO/sub 2/; analog circuit region; body contact design rule; body resistance; body-related characteristics; digital circuit region; floating body effect; kink effect; mixed mode ICs; operational current; source/drain resistance degradation; thick SOI films; thin SOI films; Analog integrated circuits; Analog-digital conversion; Analog-digital integrated circuits; Application specific integrated circuits; Digital circuits; Immune system; Implants; MOS devices; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1998. Proceedings., 1998 IEEE International

Conference_Location

Stuart, FL, USA

ISSN

1078-621X

Print_ISBN

0-7803-4500-2

Type

conf

DOI

10.1109/SOI.1998.723112

Filename

723112