Title :
Surface preparation solutions for sub-90 nm IC technology
Author :
Baiya, Evanson G. ; Rosato, John J. ; Yalamanchili, M.R.
Author_Institution :
Core Technol. Dev. Group, SCP Global Technol., Boise, ID, USA
fDate :
30 June-2 July 2003
Abstract :
A single wafer immersion system has been shown to meet the particle, etch, and drying requirements for sub-90 nm process technologies. The system would be used for surface preparation applications including cleaning deep trench devices without water marks, critical cleans where ultra low Si and SiO2 consumption is required, pre-diffusion cleans, and as a replacement of conventional, high concentration RCA wet cleaning processes.
Keywords :
diffusion; drying; etching; isolation technology; surface cleaning; 90 nm; IC technology; Si consumption; SiO2 consumption; cleaning; deep trench devices; drying; etching; prediffusion; solutions; surface preparation applications; wafer immersion system; water marks; wet cleaning; Chemistry; Cleaning; Contamination; Dry etching; Electronics industry; Foundries; Surface topography; Testing; Watermarking; Wet etching;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225694
