• DocumentCode
    1961592
  • Title

    Surface preparation solutions for sub-90 nm IC technology

  • Author

    Baiya, Evanson G. ; Rosato, John J. ; Yalamanchili, M.R.

  • Author_Institution
    Core Technol. Dev. Group, SCP Global Technol., Boise, ID, USA
  • fYear
    2003
  • fDate
    30 June-2 July 2003
  • Firstpage
    50
  • Lastpage
    53
  • Abstract
    A single wafer immersion system has been shown to meet the particle, etch, and drying requirements for sub-90 nm process technologies. The system would be used for surface preparation applications including cleaning deep trench devices without water marks, critical cleans where ultra low Si and SiO2 consumption is required, pre-diffusion cleans, and as a replacement of conventional, high concentration RCA wet cleaning processes.
  • Keywords
    diffusion; drying; etching; isolation technology; surface cleaning; 90 nm; IC technology; Si consumption; SiO2 consumption; cleaning; deep trench devices; drying; etching; prediffusion; solutions; surface preparation applications; wafer immersion system; water marks; wet cleaning; Chemistry; Cleaning; Contamination; Dry etching; Electronics industry; Foundries; Surface topography; Testing; Watermarking; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-7972-1
  • Type

    conf

  • DOI
    10.1109/UGIM.2003.1225694
  • Filename
    1225694
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1961592