Characterization of the effect of TiN oxidation on via resistance

Author

Gunturu, Krishna ; Haskett, Thomas ; Corsetti, Todd ; Engle, Mike ; Prasad, Jagdish

Author_Institution

AMI Semicond. Inc., Pocatello, ID, USA

fYear

2003

fDate

30 June-2 July 2003

Firstpage

54

Lastpage

56

Abstract

A failure mechanism due to presence of an oxygen interface at the via bottom was identified. Our in depth experimental analysis indicate that this interface layer is formed due to oxidation of TiN layer during oxygen plasma exposure and the marginality of the RF sputter etch step that is performed prior to via barrier deposition. TEM and EDX analysis of high resistance vias confirmed the presence of an oxidation TiN layer at the bottom of the via.

Keywords

X-ray chemical analysis; electrical resistivity; failure analysis; oxidation; plasma materials processing; sputter etching; titanium compounds; transmission electron microscopy; EDX; RF sputter etch; TEM; TiN; TiN oxidation; barrier deposition; failure mechanism; interface layer; oxidation; oxygen interface; oxygen plasma exposure; resistance; CMOS process; Electric resistance; Failure analysis; Oxidation; Plasma applications; Radio frequency; Sputter etching; Strips; Testing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

ISSN

0749-6877

Print_ISBN

0-7803-7972-1

Type

conf

DOI

10.1109/UGIM.2003.1225695

Filename

1225695