Title :
Characterization of the effect of TiN oxidation on via resistance
Author :
Gunturu, Krishna ; Haskett, Thomas ; Corsetti, Todd ; Engle, Mike ; Prasad, Jagdish
Author_Institution :
AMI Semicond. Inc., Pocatello, ID, USA
fDate :
30 June-2 July 2003
Abstract :
A failure mechanism due to presence of an oxygen interface at the via bottom was identified. Our in depth experimental analysis indicate that this interface layer is formed due to oxidation of TiN layer during oxygen plasma exposure and the marginality of the RF sputter etch step that is performed prior to via barrier deposition. TEM and EDX analysis of high resistance vias confirmed the presence of an oxidation TiN layer at the bottom of the via.
Keywords :
X-ray chemical analysis; electrical resistivity; failure analysis; oxidation; plasma materials processing; sputter etching; titanium compounds; transmission electron microscopy; EDX; RF sputter etch; TEM; TiN; TiN oxidation; barrier deposition; failure mechanism; interface layer; oxidation; oxygen interface; oxygen plasma exposure; resistance; CMOS process; Electric resistance; Failure analysis; Oxidation; Plasma applications; Radio frequency; Sputter etching; Strips; Testing; Tin;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225695
