Title :
High resolution metal lift-off characterization
Author :
Sutton, Akil K. ; Steen, Steven
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
30 June-2 July 2003
Abstract :
This project explores the challenges associated with the scaling of the standard metal lift off process to the 0.13 um technology node using DUV lithography. The analysis Will be done on a sequence of nested lines and spaces using a phase shift mask. PROLITH, a powerful Lithography simulation tool, will be employed to streamline the lithography optimization segment of the process. Experimental manipulation of the focus, dose and other optical parameters during exposure will then be evaluated through top-down and cross-section SEM images. Process modifications for improved linewidth and undercut control are recommended.
Keywords :
phase shifting masks; scanning electron microscopy; ultraviolet lithography; DUV lithography; cross-section SEM images; dose; high resolution metal lift-off properties; lithography optimization segment; lithography simulation; nested lines; optical parameters; phase shift mask; top-down SEM images; undercut control; Focusing; Image segmentation; Lithography; Optical films; Optical interconnections; Resists; Solvents; Space technology; Streaming media; Substrates;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225704
