High resolution metal lift-off characterization

Author

Sutton, Akil K. ; Steen, Steven

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

30 June-2 July 2003

Firstpage

94

Lastpage

98

Abstract

This project explores the challenges associated with the scaling of the standard metal lift off process to the 0.13 um technology node using DUV lithography. The analysis Will be done on a sequence of nested lines and spaces using a phase shift mask. PROLITH, a powerful Lithography simulation tool, will be employed to streamline the lithography optimization segment of the process. Experimental manipulation of the focus, dose and other optical parameters during exposure will then be evaluated through top-down and cross-section SEM images. Process modifications for improved linewidth and undercut control are recommended.

Keywords

phase shifting masks; scanning electron microscopy; ultraviolet lithography; DUV lithography; cross-section SEM images; dose; high resolution metal lift-off properties; lithography optimization segment; lithography simulation; nested lines; optical parameters; phase shift mask; top-down SEM images; undercut control; Focusing; Image segmentation; Lithography; Optical films; Optical interconnections; Resists; Solvents; Space technology; Streaming media; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

ISSN

0749-6877

Print_ISBN

0-7803-7972-1

Type

conf

DOI

10.1109/UGIM.2003.1225704

Filename

1225704