Title :
A 435 MHz high-gain low-power LNA in 0.35 μm SOI CMOS
Author :
Huang, Douglas ; Zencir, E. ; Dogan, Numan S. ; Arvas, Ercument
Author_Institution :
North Carolina Agric. & Tech. State Univ., Greensboro, NC, USA
fDate :
30 June-2 July 2003
Abstract :
A low-power, high-gain, fully-differential low noise amplifier (LNA) in 0.35 -μm SOI CMOS technology is designed and tested. The LNA is intended for use as the amplification stage in a subsampling receiver at UHF frequency. The measured 46-dB small signal gain, 3-dB noise figure, and 19-mW total power consumption is reported for the first time.
Keywords :
UHF power amplifiers; differential amplifiers; gain measurement; power transistors; semiconductor device noise; silicon-on-insulator; 0.35 micron; 19 mW; 3 dB; 435 MHz; 46 dB; SOI CMOS; Si; UHF; amplification stage; differential LNA; differential low noise amplifier; noise figure; subsampling receiver; CMOS technology; Frequency; Gain measurement; Low-noise amplifiers; Noise figure; Noise measurement; Power measurement; Testing; Time measurement; UHF measurements;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225709
