Transition from generation- to recombination-based transients in partially depleted SOI MOSFETs

Summary form only given. The thorough analysis of transient mechanisms in partially depleted SOI devices is of primary importance due to the impact of time-dependent floating-body effects on IC operation. Undesirable drain current overshoot or undershoot occurs when the transistor is turned-on or -off, respectively, leading to current glitches. An original situation is presented and modeled in this work: simultaneous pulses applied to the front and back gate can modify the shape and magnitude of the current transient by involving a combination of generation and recombination mechanisms. Our analytical n-MOSFET model is simple enough to be included in circuit simulators such as SOI-SPICE.