Title :
An S-Band Gallium Arsenide Field Effect Transistor
Author :
Turner, A. ; Waller, J.
Author_Institution :
Plessey Company Limited at the Allen Clark Research Centre, Caswell, Towcester, Northants.
Keywords :
Bonding; Capacitance; Electron mobility; FETs; Frequency; Gallium arsenide; Noise figure; Silicon; Substrates; Transmission line measurements;
Conference_Titel :
Microwave Conference, 1969. 1st European
Conference_Location :
London, UK
DOI :
10.1109/EUMA.1969.331950
