Title :
The Development of Gallium Arsenide Schottky Barrier Diodes as Mixers and Detectors
Author :
Oxley, T.H. ; Summers, J. ; Hansom, A.
Author_Institution :
General Electric Co.Ltd., Semiconductor Laboratories, Hirst Research Centre, Wembley, England.
Keywords :
Detectors; Encapsulation; Fabrication; Gallium arsenide; Impedance; Noise figure; Plastics; Schottky barriers; Schottky diodes; Semiconductor diodes;
Conference_Titel :
Microwave Conference, 1969. 1st European
Conference_Location :
London, UK
DOI :
10.1109/EUMA.1969.331951
