DocumentCode :
1962140
Title :
A MATLAB Model of the Second Generation Switched Current Memory Cell
Author :
Pavlik, Michal ; Haze, Jiri ; Vrba, Radimir
Author_Institution :
Dept. of Microelectron., Brno Univ. of Technol., Brno, Czech Republic
fYear :
2009
fDate :
11-16 Oct. 2009
Firstpage :
101
Lastpage :
104
Abstract :
The paper deals with the design of the second generation memory cell MATLAB model. There are described errors of the second generation switched current (SI) memory cell and impact of the SI technique on the transfer function of the memory cell, too. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 mum technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.
Keywords :
CMOS memory circuits; error analysis; mathematics computing; CADENCE software; MATLAB model; error expressions; second generation switched current memory cell; CMOS technology; Integrated circuit technology; MATLAB; Mathematical model; Semiconductor device modeling; Signal analysis; Switches; Switching circuits; Transfer functions; Voltage; errors; memory cell; switched current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Circuits, Electronics and Micro-electronics, 2009. CENICS '09. Second International Conference on
Conference_Location :
Sliema
Print_ISBN :
978-0-7695-3832-7
Type :
conf
DOI :
10.1109/CENICS.2009.27
Filename :
5291493
Link To Document :
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