Title :
A monolithic stacked Class-D approach for high voltage DC-AC conversion in standard CMOS
Author :
Callemeyn, Piet ; Steyaert, M.
Author_Institution :
ESAT-MICAS, KU Leuven, Leuven, Belgium
Abstract :
A fully-integrated Class-D DC-AC converter is realized in a 130 nm 1.2V CMOS technology with an on-chip inductor and capacitor. Several dies are combined to achieve higher output power. A multilevel topology allows the combined Class-D DC-AC system to achieve higher output voltages at a multiple of the nominal supply voltage of 1.2V. Problems such as hot carrier degradation and oxide breakdown are absent, since each subblock operates within the standard voltage limits. An off-chip low frequency signal can be used as a reference clock for the Class-D DC-AC converter using an on-chip PWM generation circuit. For this monolithic multilevel system, no discrete components are needed anymore, reducing the bill of materials. A maximum efficiency of 66.5% for a stand-alone die is reached. An output peak voltage of 2.4V peak-to-peak is achieved at an efficiency of 33% by using a combination of several dies. A total output power of 95mW is obtained.
Keywords :
CMOS integrated circuits; DC-AC power convertors; PWM power convertors; CMOS technology; capacitor; efficiency 33 percent; fully-integrated class-D DC-AC converter; high voltage DC-AC conversion; higher output power; hot carrier degradation; monolithic multilevel system; monolithic stacked class-D approach; multilevel topology; off-chip low frequency signal; on-chip PWM generation circuit; on-chip inductor; oxide breakdown; power 95 mW; reference clock; size 130 nm; voltage 1.2 V; CMOS integrated circuits; Capacitors; Clocks; Inductors; Inverters; Pulse width modulation; System-on-chip;
Conference_Titel :
ESSCIRC (ESSCIRC), 2013 Proceedings of the
Conference_Location :
Bucharest
Print_ISBN :
978-1-4799-0643-7
DOI :
10.1109/ESSCIRC.2013.6649098