DocumentCode
1962272
Title
Modeling the effects of quantum exchange in nanoscale-spaced double-quantum-well systems
Author
Rodriguez, J.R. ; Diaz-Velez, J.C. ; Hanna, C.B.
fYear
2003
fDate
30 June-2 July 2003
Firstpage
203
Lastpage
206
Abstract
In this paper, we calculate the effects of quantum-mechanical electronic exchange on the layer occupancies and differential capacitances of bilayer electron systems at temperatures near absolute zero.
Keywords
carrier density; monolayers; nanostructured materials; quantum wells; bilayer electron systems; differential capacitances; modeling; monolayers; nanoscale-spaced double-quantum-well systems; quantum exchange; quantum-mechanical electronic exchange; Charge carrier density; Charge carrier processes; Charge carriers; Magnetic fields; Quantum capacitance; Temperature; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
ISSN
0749-6877
Print_ISBN
0-7803-7972-1
Type
conf
DOI
10.1109/UGIM.2003.1225726
Filename
1225726
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