Title :
Modeling the effects of quantum exchange in nanoscale-spaced double-quantum-well systems
Author :
Rodriguez, J.R. ; Diaz-Velez, J.C. ; Hanna, C.B.
fDate :
30 June-2 July 2003
Abstract :
In this paper, we calculate the effects of quantum-mechanical electronic exchange on the layer occupancies and differential capacitances of bilayer electron systems at temperatures near absolute zero.
Keywords :
carrier density; monolayers; nanostructured materials; quantum wells; bilayer electron systems; differential capacitances; modeling; monolayers; nanoscale-spaced double-quantum-well systems; quantum exchange; quantum-mechanical electronic exchange; Charge carrier density; Charge carrier processes; Charge carriers; Magnetic fields; Quantum capacitance; Temperature; Virtual manufacturing; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225726
