Title :
A 2.14GHz watt-level power amplifier with passive load modulation in a SOI CMOS technology
Author :
Tant, G. ; Giry, A. ; Vincent, Pierre ; Arnould, Jean-Daniel ; Fournier, J.-M.
Author_Institution :
LETI Minatec, CEA, Grenoble, France
Abstract :
This paper presents the implementation and measurement results of a power amplifier with passive load modulation targeting Femtocell base station applications and integrated in SOI CMOS 130nm process. The proposed structure combines a SOI LDMOS power stage with a SOI CMOS Tunable Matching Network (TMN) based on high voltage switched capacitors in order to improve PA efficiency at back-off power. At 2.14GHz, the PA achieves 31.5dBm of measured peak power under 4V supply and compared to a conventional PA with fixed output matching network, the measured efficiency improvement is 60 % at 8.5 dB back-off.
Keywords :
CMOS integrated circuits; power amplifiers; silicon-on-insulator; Femtocell base station; LDMOS power stage; SOI CMOS tunable matching network; frequency 2.14 GHz; high voltage switched capacitors; passive load modulation; power amplifier; size 130 nm; voltage 4 V; CMOS integrated circuits; Capacitors; Impedance; Modulation; Power amplifiers; Power generation; Switching circuits;
Conference_Titel :
ESSCIRC (ESSCIRC), 2013 Proceedings of the
Conference_Location :
Bucharest
Print_ISBN :
978-1-4799-0643-7
DOI :
10.1109/ESSCIRC.2013.6649104
