Title :
Gate-controlled punch through transistor
Author :
Li, Xiangli ; Pan, Huadian ; Wilamowski, Bogdan M.
Author_Institution :
Dept. of Electr. Eng., Idaho Univ., Boise, ID, USA
fDate :
30 June-2 July 2003
Abstract :
Operation of the gate-controlled punch through transistor is demonstrated in this paper. The characteristics of the device are simulated using SILVACO atlas device simulator. This device shows high voltage, high operation frequency, and low noise properties. This punch through device can be used in high power control circuit, and also can be used for fast analog circuits for multiplication, squaring and root calculation.
Keywords :
semiconductor device models; semiconductor device noise; static induction transistors; analog circuits; gate-controlled punch; high operation frequency; power control circuit; transistor; Analog circuits; Circuit noise; Circuit simulation; Equations; Frequency; MOSFETs; Power control; Shape; Temperature control; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225731
