Author :
Jefremow, M. ; Kern, T. ; Backhausen, U. ; Elbs, J. ; Rousseau, B. ; Roll, C. ; Castro, L. ; Roehr, T. ; Paparisto, E. ; Herfurth, K. ; Bartenschlager, R. ; Thierold, S. ; Renardy, R. ; Kassenetter, S. ; Lawal, Najeem ; Strasser, Marc ; Trottmann, W. ; Sc
Abstract :
This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.
Keywords :
amplifiers; automotive electronics; flash memories; integrated memory circuits; logic arrays; low-power electronics; readout electronics; time-varying networks; HS3P embedded flash memory cell; automotive applications; embedded flash macro; hot source triple poly cell; local ground referenced read circuit design; low current write operation; low voltage read path; low voltage swing read operation; multivoltage domain multiplexer design; read-write throughput; robust time domain source side sense amplifier; size 65 nm; Arrays; Automotive engineering; Logic gates; Microprocessors; Noise; Throughput;
