• DocumentCode
    1962356
  • Title

    A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

  • Author

    Jefremow, M. ; Kern, T. ; Backhausen, U. ; Elbs, J. ; Rousseau, B. ; Roll, C. ; Castro, L. ; Roehr, T. ; Paparisto, E. ; Herfurth, K. ; Bartenschlager, R. ; Thierold, S. ; Renardy, R. ; Kassenetter, S. ; Lawal, Najeem ; Strasser, Marc ; Trottmann, W. ; Sc

  • Author_Institution
    Infineon Technol. AG, Neubiberg, Germany
  • fYear
    2013
  • fDate
    16-20 Sept. 2013
  • Firstpage
    193
  • Lastpage
    196
  • Abstract
    This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.
  • Keywords
    amplifiers; automotive electronics; flash memories; integrated memory circuits; logic arrays; low-power electronics; readout electronics; time-varying networks; HS3P embedded flash memory cell; automotive applications; embedded flash macro; hot source triple poly cell; local ground referenced read circuit design; low current write operation; low voltage read path; low voltage swing read operation; multivoltage domain multiplexer design; read-write throughput; robust time domain source side sense amplifier; size 65 nm; Arrays; Automotive engineering; Logic gates; Microprocessors; Noise; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC (ESSCIRC), 2013 Proceedings of the
  • Conference_Location
    Bucharest
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4799-0643-7
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2013.6649105
  • Filename
    6649105