DocumentCode
1962366
Title
Enhanced hot-carrier induced degradation in pMOSFETs stressed under high gate voltage
Author
Chen, Jone F. ; Tsao, Chih-Pin ; Ong, T.C.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
2003
fDate
30 June-2 July 2003
Firstpage
230
Lastpage
233
Abstract
Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.
Keywords
Auger effect; MOSFET; hot carriers; stress effects; tunnelling; electron tunneling; gate oxide; gate plus Auger recombination; high gate voltage stress; hot-carrier induced drain current degradation; hot-hole energy gain; lower drain voltage; pMOSFET; CMOS technology; Degradation; Electrons; Hot carriers; MOSFETs; Spontaneous emission; Stress; Temperature; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
ISSN
0749-6877
Print_ISBN
0-7803-7972-1
Type
conf
DOI
10.1109/UGIM.2003.1225732
Filename
1225732
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