Title :
Atomic structure of self-organized QDs
Author_Institution :
Fritz-Haber-Inst. of the Max-Planck-Soc., Berlin, Germany
Abstract :
We determined the exact shape of self-assembled InAs QDs from atomically resolved structures on their bounding facets. Four facets dominate the shape of the QDs, whose Miller indices were identified with the help of studies on high-index GaAs surfaces to be {137}
Keywords :
III-V semiconductors; indium compounds; reflection high energy electron diffraction; scanning tunnelling microscopy; self-assembly; semiconductor quantum dots; surface structure; GaAs; InAs; Miller indices; RHEED; atomic structure; atomically resolved structures; bounding facets; high-index surfaces; quantum dot shape; self-assembled QD; self-organized QD; top view STM; Gallium arsenide; Jacobian matrices; Laser applications; Quantum dot lasers; Scanning electron microscopy; Semiconductor nanostructures; Shape; Temperature; Transmission electron microscopy; Tunneling;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.968841
