DocumentCode :
1962595
Title :
Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots
Author :
Kyoungsik Kim ; Norris, Theodore B.
Author_Institution :
Center for Ultrafact Opt. Sci., Michigan Univ., Ann Arbor, MI
Volume :
2
fYear :
2001
fDate :
2001
Firstpage :
401
Abstract :
The dynamics of spectral hole burning, gain saturation and carrier capture are important in the design of semiconductor QD lasers and amplifiers, especially in high speed applications. Using femtosecond three-pulse white light pump and probe differential transmission spectroscopy, we have observed spectral hole burning in both the excited and ground states, which directly shows the carrier relaxation between the discrete energy levels in QDs with a population inversion. The gain recovery due to both relaxation of confined excited states and carrier capture are observable in our spectrally and temporally resolved experiments
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical hole burning; quantum well lasers; self-assembly; semiconductor quantum dots; stimulated emission; time resolved spectra; InAs; InGaAs; QD lasers; carrier capture; carrier relaxation; discrete energy; electron-hole pairs; excited states; gain dynamics; gain recovery; gain saturation; ground states; interband transition; population inversion; pump and probe transmission spectra; self organized quantum dots; spectral hole burning; stimulated emission; time-resolved scan; Carrier confinement; Energy states; Laser excitation; Optical design; Probes; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers; Spectroscopy; Stationary state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-7105-4
Type :
conf
DOI :
10.1109/LEOS.2001.968842
Filename :
968842
Link To Document :
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