Title :
Threshold voltage control for deep sub-micrometer fully depleted SOI MOSFET
Author :
Li, Xiangli ; Parke, Stephen A. ; Wilamowski, Bogdan M.
Author_Institution :
Idaho Univ., Boise, ID, USA
fDate :
30 June-2 July 2003
Abstract :
In this paper, the threshold voltage of fully depleted silicon on insulator device with geometry scale down below 100 nm is investigated deeply. All the device simulations are performed using SILVACO Atlas device simulator. Several ways to control the threshold voltage are proposed and simulated. Threshold voltage changing with the silicon film thickness, channel doping concentration, gate oxide thickness and gate electrode work function is simulated. One short channel NMOS and one PMOS FDSOI device structure with effective channel length 90 nm and 30 nm silicon film thickness are designed.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; thin film transistors; voltage control; 100 nm; 30 nm; 90 nm; PMOS SOI device structure; Si-SiO2; channel doping concentration; channel length; deep submicrometer fully depleted SOI MOSFET; device simulation; gate electrode work function; gate oxide thicknes; p-channel metal-oxide-semiconductor; silicon film thickness; silicon-on-insulator device; threshold voltage control; CMOS technology; Doping; Geometry; MOS devices; MOSFET circuits; Power supplies; Semiconductor films; Silicon on insulator technology; Threshold voltage; Voltage control;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225744
