Low threshold oxide-confined InAs quantum dash ridge waveguide lasers on InP substrates

Author

Wang, R.H. ; Stintz, A. ; Rotter, T.J. ; Malloy, K.J. ; Lester, L.F. ; Gray, A.L. ; Newell, T.C. ; Varangis, P.M.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

405

Abstract

Oxide-confined ridge waveguide semiconductor lasers with a new type of low-dimensional active region - the self-assembled InAs "quantum dash" - are demonstrated. The name "dash" comes from a physical description of what is essentially an InAs QD that is elongated in one crystalline direction. They have room-temperature operation wavelength of 1.57 μm, a high injection efficiency of 87%, and a low threshold current density of 450 A/cm²

Keywords

III-V semiconductors; indium compounds; laser cavity resonators; oxidation; quantum well lasers; self-assembly; semiconductor quantum dots; waveguide lasers; 1.57 micron; InAs; InP; elongated quantum dot; high injection efficiency; inverse external quantum efficiency; low threshold lasers; oxide-confined semiconductor lasers; quantum dash ridge waveguide lasers; room-temperature operation; self-assembled quantum dash; Diode lasers; Indium phosphide; Optical waveguides; Oxidation; Quantum dots; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968844

Filename

968844