Three-dimensional simulation of body contact structures in PD SOI MOSFETs

Author

Daghighi, A. ; Osman, M.A.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA

fYear

2003

fDate

30 June-2 July 2003

Firstpage

288

Lastpage

291

Abstract

The effect of body contact size on the control of floating body voltage in body tied to source partially depleted (BTS PD) SOI MOSFET has been investigated using three dimensional simulations using non-isothermal drift diffusion model. The results show that using smaller contacts (0.05 μm) are as effective as larger contacts (0.35 μm) while maintaining higher current drive. To accelerate simulation, a simple two-dimensional model to investigate BTS contacts in SOI MOSFETs was developed. Simulation results using the two-dimensional model show the same trend as the full three-dimensional simulations at less than 1% of the computation time.

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; body contact size effect; body contact structures; body tied-source partially depleted SOI MOSFET; nonisothermal drift diffusion model; three-dimensional simulation; two-dimensional model; Circuit simulation; Computational modeling; Computer simulation; Contacts; Hydrodynamics; Impact ionization; MOSFETs; Silicon on insulator technology; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

ISSN

0749-6877

Print_ISBN

0-7803-7972-1

Type

conf

DOI

10.1109/UGIM.2003.1225745

Filename

1225745