Title :
Three-dimensional simulation of body contact structures in PD SOI MOSFETs
Author :
Daghighi, A. ; Osman, M.A.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fDate :
30 June-2 July 2003
Abstract :
The effect of body contact size on the control of floating body voltage in body tied to source partially depleted (BTS PD) SOI MOSFET has been investigated using three dimensional simulations using non-isothermal drift diffusion model. The results show that using smaller contacts (0.05 μm) are as effective as larger contacts (0.35 μm) while maintaining higher current drive. To accelerate simulation, a simple two-dimensional model to investigate BTS contacts in SOI MOSFETs was developed. Simulation results using the two-dimensional model show the same trend as the full three-dimensional simulations at less than 1% of the computation time.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; body contact size effect; body contact structures; body tied-source partially depleted SOI MOSFET; nonisothermal drift diffusion model; three-dimensional simulation; two-dimensional model; Circuit simulation; Computational modeling; Computer simulation; Contacts; Hydrodynamics; Impact ionization; MOSFETs; Silicon on insulator technology; Thermal conductivity; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225745
