• DocumentCode
    1962689
  • Title

    Gallium Arsenide Fieid Effect Transistors - their Performance and Application Up to X-Band Frequencies

  • Author

    Luxton, H.E.G.

  • Author_Institution
    Allen Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. NN12 8EQ
  • fYear
    1974
  • fDate
    10-13 Sept. 1974
  • Firstpage
    92
  • Lastpage
    96
  • Abstract
    The microwave performance of GaAs FET´s is reviewed and examples of their application in systems operating up to X-band frequencies discussed. Examples of amplifiers (one giving 42 dB gain at 11.2 GHz) and oscillators operating at frequencies hitherto unattainable by 2-port solid state devices are used to illustrate the performance and potential of GaAs FET´s in microwave systems.
  • Keywords
    Cutoff frequency; Gallium arsenide; L-band; Low-noise amplifiers; Microstrip; Microwave FETs; Microwave amplifiers; Microwave devices; Noise figure; Performance gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1974. 4th European
  • Conference_Location
    Montreux, Switzerland
  • Type

    conf

  • DOI
    10.1109/EUMA.1974.332019
  • Filename
    4130660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1962689