Title :
A 12 GHZ Field Effect Transistor Amplifier for Communications Satellite Applications
Author :
James, D.S. ; Douville, R.J.P. ; Breithaupt, R.W. ; VanKoughnett, A.L.
Author_Institution :
Communications Research Centre, Department of Communications, Box 490, Station "A", Ottawa, Canada. K1N 8T5
Abstract :
The development of a 12 GHz Field-Effect Transistor (FET) Amplifier for use in a communications technology satellite is described. The principal features of Fairchild FMT 941 and Plessey GAT 3 FETs are compared and the performance of these devices in single and two-stage amplifiers is discussed. The design and performance of a five-stage prototype amplifier employing Fairchild devices are also discussed. Results for a similar amplifier employing Plessey devices are presented orally.
Keywords :
Artificial satellites; Communications technology; Cyclic redundancy check; FETs; Gallium arsenide; MOS capacitors; Packaging; Radio frequency; Substrates; Testing;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332020
