Title :
Progress towards high power 1.5 /spl mu/m GaInNAsSb/GaAs lasers for Raman amplifiers
Author :
Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
We present a CW 1.5 /spl mu/m GaInNAsSb laser with threshold current density of 1.06 kA/cm/sup 2/, characteristic temperature of 101 K, and 140 mW CW output power, tested epitaxial-side up. 527 mW (pulsed) were achieved from a single facet.
Keywords :
III-V semiconductors; Raman lasers; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; quantum well lasers; wide band gap semiconductors; 1.5 mum; 101 K; 140 mW; 527 mW; GaInNAsSb-GaAs; GaInNAsSb/GaAs lasers; Raman amplifiers; threshold current density;
Conference_Titel :
Optical Fiber Communication Conference, 2004. OFC 2004
Conference_Location :
Los Angeles, CA, USA
Print_ISBN :
1-55752-772-5
