DocumentCode :
1962741
Title :
Avalanche Diode Amplifiers for Microwave Radio Equipment
Author :
Paik, S.F. ; John, G.E.St. ; Pallemaerts, C.J.R.
Author_Institution :
Raytheon Company, Special Microwave Devices Operation, Waltham, Massachusetts
fYear :
1974
fDate :
10-13 Sept. 1974
Firstpage :
102
Lastpage :
107
Abstract :
Avalanche diode amplifiers (ADAs) with power outputs of 0.5 - 2.0 Watts have been developed for communication systems. Circuit design technique for these ADAs and their performance characteristics in high-capacity microwave communication systems are described. In addition, recent experimental results on high power (5 - 10 Watts) amplifiers using Readprofile IMPATT diodes are presented.
Keywords :
Circuit synthesis; Delay; Diodes; Ferrites; Microstrip; Microwave amplifiers; Microwave devices; Power amplifiers; Power generation; Radiofrequency amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
Type :
conf
DOI :
10.1109/EUMA.1974.332021
Filename :
4130662
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1962741
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