DocumentCode
1962797
Title
Measurement of self-phase modulation in a semiconductor optical amplifier using a Mach-Zehnder interferometer
Author
Djalali-Vali, A. ; Gallion, P. ; Erasme, D. ; Chabran, C.
Author_Institution
Dept. of Commun., Ecole Nat. Superieure des Telecommun., Paris, France
fYear
1997
fDate
11-13 Aug. 1997
Firstpage
66
Lastpage
67
Abstract
Semiconductor optical amplifiers (SOAs) are very attractive for fiber optical communication systems, because of their small size, low power consumption, and optical gain. However, nonlinearities caused by signal induced carrier density modulation must be taken into account. Nevertheless, for some applications like in Sagnac interferometer, they can be used as an useful effect, for optical switching or wavelength converter. Theoretically, they appear as frequency deviation peaks at the leading and trailing edge of a pulse travelling through SOAs. An experimental set-up is used, in order to measure this effect confirming theoretical predictions. Furthermore, signal induced phase shift dependence on bias current of the SOA is presented.
Keywords
Mach-Zehnder interferometers; distributed feedback lasers; electro-optical modulation; electro-optical switches; laser variables measurement; light interferometry; optical frequency conversion; phase modulation; semiconductor lasers; Mach-Zehnder interferometer; Sagnac interferometer; bias current; fiber optical communication systems; low power consumption; nonlinearities; optical gain; optical switching; self-phase modulation; semiconductor optical amplifier; signal induced carrier density modulation; signal induced phase shift dependence; small size; wavelength converter; Charge carrier density; Energy consumption; Fiber nonlinear optics; Nonlinear optics; Optical fiber communication; Optical interferometry; Optical modulation; Sagnac interferometers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location
Montreal, Que., Canada
Print_ISBN
0-7803-3891-X
Type
conf
DOI
10.1109/LEOSST.1997.619224
Filename
619224
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