• DocumentCode
    1962797
  • Title

    Measurement of self-phase modulation in a semiconductor optical amplifier using a Mach-Zehnder interferometer

  • Author

    Djalali-Vali, A. ; Gallion, P. ; Erasme, D. ; Chabran, C.

  • Author_Institution
    Dept. of Commun., Ecole Nat. Superieure des Telecommun., Paris, France
  • fYear
    1997
  • fDate
    11-13 Aug. 1997
  • Firstpage
    66
  • Lastpage
    67
  • Abstract
    Semiconductor optical amplifiers (SOAs) are very attractive for fiber optical communication systems, because of their small size, low power consumption, and optical gain. However, nonlinearities caused by signal induced carrier density modulation must be taken into account. Nevertheless, for some applications like in Sagnac interferometer, they can be used as an useful effect, for optical switching or wavelength converter. Theoretically, they appear as frequency deviation peaks at the leading and trailing edge of a pulse travelling through SOAs. An experimental set-up is used, in order to measure this effect confirming theoretical predictions. Furthermore, signal induced phase shift dependence on bias current of the SOA is presented.
  • Keywords
    Mach-Zehnder interferometers; distributed feedback lasers; electro-optical modulation; electro-optical switches; laser variables measurement; light interferometry; optical frequency conversion; phase modulation; semiconductor lasers; Mach-Zehnder interferometer; Sagnac interferometer; bias current; fiber optical communication systems; low power consumption; nonlinearities; optical gain; optical switching; self-phase modulation; semiconductor optical amplifier; signal induced carrier density modulation; signal induced phase shift dependence; small size; wavelength converter; Charge carrier density; Energy consumption; Fiber nonlinear optics; Nonlinear optics; Optical fiber communication; Optical interferometry; Optical modulation; Sagnac interferometers; Semiconductor optical amplifiers; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
  • Conference_Location
    Montreal, Que., Canada
  • Print_ISBN
    0-7803-3891-X
  • Type

    conf

  • DOI
    10.1109/LEOSST.1997.619224
  • Filename
    619224