Title :
Fabrication of an MOS Capacitor structure at NGEE ANN POLYTECHNIC´s IC fabrication facility
Author_Institution :
Microelectron. Design & Application Center, Ngee Ann Polytech., Singapore, Singapore
fDate :
30 June-2 July 2003
Abstract :
This paper describes an attempt to build and test MOS Capacitor structures at NGEE ANN POLYTECHNIC. This project was undertaken by a group of students. Details of the process flow and test strategies utilized are provided. Problems encountered and solutions taken are reported. The impact of the exercise on student learning is assessed.
Keywords :
MOS capacitors; integrated circuit design; masks; IC fabrication; MOS capacitor; Application specific integrated circuits; Circuit testing; Conductivity; Design engineering; Drilling; Fabrication; Integrated circuit testing; MOS capacitors; Microelectronics; Process design;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225755
