Title :
A device to demonstrate the Haynes-Shockley Experiment
Author_Institution :
Microelectron. Design & Application Center, Ngee Ann Polytech., Singapore, Singapore
fDate :
30 June-2 July 2003
Abstract :
The celebrated Haynes-Shockley Experiment was devised in 1951 by J. Haynes and W. Shockley to demonstrate basic carrier transport phenomena. This experiment allows diffusion, drift and recombination to be investigated in a simple yet deeply insightful manner. This paper describes an attempt to build and test a device that can be used to demonstrate the Haynes Shockley Experiment. Details of the process flow and test strategies utilized are provided. Problems encountered and solutions taken are reported.
Keywords :
carrier mobility; electron-hole recombination; masks; ohmic contacts; transistors; Haynes-Shockley device; Si-SiO2; carrier transport; diffusion; recombination; Adhesives; Electrodes; Fabrication; Glass; Ink; Microscopy; Painting; Process design; Radiative recombination; Testing;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225756