Title :
The design of low noise amplifier based on BSIM3v3 model
Author :
Kim, Chang-Sun ; Parke, Stephen
Author_Institution :
Dept. of Electr. & Comput. Eng., Boise State Univ., ID, USA
fDate :
30 June-2 July 2003
Abstract :
A BSIM3 CMOS RF model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some lumped passive components to describe the microwave behaviors. A low noise amplifier has been were designed based on this model and implemented in a 0.18 μm CMOS Process. The results show the accuracy of the model to measured data on both device and circuit level.
Keywords :
CMOS integrated circuits; MOSFET; MOSFET circuits; amplifiers; circuit noise; network synthesis; semiconductor device noise; 0.18 micron; BSIM3 CMOS RF model; BSIM3v3 model; CMOS model; RF circuit design; low noise amplifier; microwave behaviors; CMOS technology; Circuit noise; Low-noise amplifiers; MOSFET circuits; Noise figure; Noise measurement; Radio frequency; Radiofrequency amplifiers; Roentgenium; Semiconductor device modeling;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225762
