Flexible PV technology development program at IIT Bombay

Author

Duttagupta, Siddhartha P.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

fYear

2003

fDate

30 June-2 July 2003

Firstpage

362

Lastpage

363

Abstract

This paper describes the ongoing flexible PV technology program at the Indian Institute of Technology Bombay. Flexible solar cells are fabricated by depositing amorphous silicon (a-Si) on stainless steel substrate. We have relied on hot-wire CVD technology to deposit films at 110 C, since conventional PECVD processes have proven to be inadequate at that temperature. The primary requirement was a high doping concentration of the p-type and n-type a-Si layers. The efficiency of the single-junction PV cells under simulated AM1.5 global radiation initially was 2.8%, which improved to 4.8% following optimization. Further improvements in efficiency will require development of a technique for low temperature texturing of the transparent conducting oxide film.

Keywords

amorphous semiconductors; chemical vapour deposition; elemental semiconductors; photovoltaic cells; semiconductor growth; semiconductor thin films; silicon; 110 C; IIT Bombay; Indian Institute of Technology; PV technology development program; Si:H; amorphous silicon; doping concentration; flexible solar cells; hot-wire CVD technology; low temperature texturing; n-type Si layers; p-type Si layers; single-junction PV cells; stainless steel substrate; transparent conducting oxide film; Amorphous silicon; Conductive films; Crystallization; Fabrication; Paper technology; Photovoltaic cells; Plasma temperature; Space technology; Steel; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial

ISSN

0749-6877

Print_ISBN

0-7803-7972-1

Type

conf

DOI

10.1109/UGIM.2003.1225767

Filename

1225767